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| HY5DU573222AFM 256M(8Mx32) GDDR SDRAM HY5DU573222AFM This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003 1 HY5DU573222AFM Revision History Revisio n No. 0.1 Defined target spec. 1) Defined IDD specification 2) Changed VDD_min value of HY5DU573222AFM-36 from 2.375V to 2.2V 3) Changed AC parameters value of HY5DU573222AFM-28/33 - tRCDRD/tRP : from 6 tCK to 5 tCK - tDAL : from 9 tCK to 8 tCK - tRFC : from 19 tCK to 17 tCK 4) Changed tCK_max value of HY5DU573222AFM-33/36/4 from 6ns to 10ns 5) Typo corrected 1) Changed VDD_min value of HY5DU573222AFM-33 from 2.375V to 2.2V 2) Changed VDD_min value of HY5DU573222AFM-36 from 2.2V to 2.375V 1) Changed CAS Latency of HY5DU573222AFM-28 from CL5 to CL4 2) Changed VDD_min value of HY5DU573222AFM-28/25 from 2.66V to 2.55V 3) Changed VDD_max value of HY5DU573222AFM-28/25 from 2.94V to 2.95V Changed tRAS_max Value from 120K to 100K in All Frequency History Draft Date Dec.2002 Remark 0.2 Mar. 2003 0.3 Apr. 2003 0.4 June 2003 0.5 Aug. 2003 Rev. 0.5 / Aug. 2003 2 HY5DU573222AFM DESCRIPTION The Hynix HY5DU573222AFM is a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM which consists of two 128Mbit(x32) - Multi-chip-, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 8Mx32 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. FEATURES * * * * * * * * * 2.5V +/- 5% VDD and VDDQ power supply supports 300/275/250MHz 2.8V VDD and VDDQ wide range min/max power supply supports 400/350Mhz All inputs and outputs are compatible with SSTL_2 interface 12mm x 12mm, 144ball FBGA with 0.8mm pin pitch Fully differential clock inputs (CK, /CK) operation The signals of Chip select control the each chip with CS0 and CS1, individually. Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS0 ~ DQS3) Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) * * Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock Write mask byte controls by DM (DM0 ~ DM3) Programmable /CAS Latency 5 and 4,3 supported Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode Internal 4 bank operations with single pulsed /RAS tRAS Lock-Out function supported Auto refresh and self refresh supported 4096 refresh cycles / 32ms (Both chips do refresh operation, simultaneously) * Half strength and Matched Impedance driver option controlled by EMRS * * * * * * * ORDERING INFORMATION Part No. HY5DU573222AFM-25 HY5DU573222AFM-28 HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM-4 Power Supply VDD 2.8V VDDQ 2.8V VDD 2.5V VDDQ 2.5V Clock Frequency 400MHz 350MHz 300MHz 275MHz 250MHz Max Data Rate 800Mbps/pin 700Mbps/pin 600Mbps/pin 550Mbps/pin 500Mbps/pin SSTL_2 144Ball FBGA 12mmx12mm interface Package Rev. 0.5 / Aug. 2003 3 HY5DU573222AFM PIN CONFIGURATION (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 A B DQS0 DM0 VSSQ DQ3 DQ2 DQ0 DQ31 DQ29 DQ28 VSSQ DM3 DQS3 C DQ4 VDDQ NC VDDQ DQ1 VDDQ VDDQ DQ30 VDDQ NC VDDQ DQ27 D DQ6 DQ5 VSSQ VSSQ VSSQ VDD VDD VSSQ VSSQ VSSQ DQ26 DQ25 E DQ7 VDDQ VDD VSS VSSQ VSS VSS VSSQ VSS VDD VDDQ DQ24 F DQ17 DQ16 VDDQ VSSQ VSS Termal VSS Termal VSS Termal VSS Termal VSSQ VDDQ DQ15 DQ14 G DQ19 DQ18 VDDQ VSSQ VSS Termal VSS Termal VSS Termal VSS Termal VSSQ VDDQ DQ13 DQ12 H DQS2 DM2 NC VSSQ VSS Termal VSS Termal VSS Termal VSS Termal VSSQ NC DM1 DQS1 J DQ21 DQ20 VDDQ VSSQ VSS Termal VSS Termal VSS Termal VSS Termal VSSQ VDDQ DQ11 DQ10 K DQ22 DQ23 VDDQ VSSQ VSS VSS VSS VSS VSSQ VDDQ DQ9 DQ8 L /CAS /W/E VDD VSS A10 VDD VDD NC2 VSS VDD NC NC M /RAS NC /CS1 BA1 A2 A11 A9 A5 NC3 CLK /CLK NC N /CS0 NC BA0 A0 A1 A3 A4 A6 A7 A8/AP CKE VREF P Note : 1. Outer ball, A1~A14, P1~P14, A1~P1, A14~P14 are depopulated. 2. Ball L9(NC2) is reserved for A12. 3. Ball M10(NC3) is reserved for BA2. ROW and COLUMN ADDRESS TABLE Items Organization Row Address Column Address Bank Address Auto Precharge Flag Refresh Chip Selection 8Mx32 1M x 32 x 4banks x 2chip A0 ~ A11 A0 ~ A7 BA0, BA1 A8 4K CS0, CS1 Note: 1. 8Mx32 DDR is composed of two 4Mx32 DDR. 2. Multi-chip(8Mx32 DDR) is controlled by CS0 and CS1, individually. Rev. 0.5 / Aug. 2003 4 HY5DU573222AFM PIN DESCRIPTION PIN CK, /CK TYPE Input DESCRIPTION Clock: CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK (both directions of crossing). Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after Vdd is applied. Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All commands are masked when CS0 or CS1 is registered high. CS0 or CS1 provides for external bank selection on systems with multiple banks. CS0 and CS1 are considered part of the command code. When it is the operationg state of MRS, Power up sequence, EMRS, it should be enabled in pairs. Except this case, it can be operated, individually. Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRECHARGE command is being applied. Address Inputs: Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A8 is sampled during a precharge command to determine whether the PRECHARGE applies to one bank (A8 LOW) or all banks (A8 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET command (MRS or EMRS). Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being entered. Input Data Mask: DM(0~3) is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23; DM3 corresponds to the data on DQ24-Q31. Data Strobe: Output with read data, input with write data. Edge aligned with read data, centered in write data. Used to capture write data. DQS0 corresponds to the data on DQ0-Q7; DQS1 corresponds to the data on DQ8-Q15; DQS2 corresponds to the data on DQ16-Q23; DQS3 corresponds to the data on DQ24-Q31 Data input / output pin : Data Bus Power supply for internal circuits and input buffers. Power supply for output buffers for noise immunity. Reference voltage for inputs for SSTL interface. No connection. CKE Input /CS0, /CS1 Input BA0, BA1 Input A0 ~ A11 Input /RAS, /CAS, /WE Input DM0 ~ DM3 Input DQS0 ~ DQS3 I/O DQ0 ~ DQ31 VDD/VSS VDDQ/VSSQ VREF NC I/O Supply Supply Supply NC Rev. 0.5 / Aug. 2003 5 HY5DU573222AFM FUNCTIONAL BLOCK DIAGRAM (4Banks x 1Mbit x 32 I/O) x 2Chips Double Data Rate Synchronous DRAM W Data Register rite 2-bit PrefetchUnit 32bit Input Buffer DS CLK CLK /CLK CKE CS0 /RAS /CAS /W E /CLK CKE CS1 /RAS /CAS /W E 32 64bit W Data Register rite 2-bit PrefetchUnit Bank 1Mx32/Bank0 Control 64 Bank Control Output Buffer Input Buffer Output Buffer Input Buffer Sense AMP Sense AMP DS DQ[0:31] 2-bit Prefetch Unit Command Command Decoder Decoder Output Buffer 1Mx32/Bank0 1Mx32 /Bank1 64bit 32bit 1Mx32 /Bank1 DM (0~3) DM(0~3) DM(0~3) DM (0~3) Mode Register Mode Register Row Decoder 1Mx32 /Bank2 Row Decoder 1Mx32 /Bank3 1Mx32 /Bank2 64 1Mx32 /Bank3 2-bit Prefetch Unit 2-bit Prefetch Unit Colum Decoder n Sense AMP 32 DQ[0:31] A0-A11 A0-A11 BA0,BA1 BA0,BA1 Colum Decoder n Address Address Buffer Buffer Colum Address n Counter CLK_DLL Colum Address n Mode Register Counter CLK, /CLK Data Strobe LDQS,UDQS Transm itter Data Strobe DS Transm itter DS DLL CLK_DLL Block Data Strobe Receiver DQS0 ~ DQS3 Rev. 0.5 / Aug. 2003 6 HY5DU573222AFM SIMPLIFIED COMMAND TRUTH TABLE Command Extended Mode Register Set Mode Register Set Device Deselect No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Read Burst Stop Auto Refresh Entry Self Refresh Exit CKEn-1 H H H H H CKEn X X X X X CS0/ CS1 L L H L L L RAS L L X H L H CAS L L X H H L WE L L X H H H CA RA L H L H H L X X ADDR A8/ AP OP code OP code X BA Note 1,2,6 1,2,6 1 V V 1 1,7 1,3,7 1,7 1,4,7 1,5 1 1 1 1,6 H X L H L L CA V X V H H H H L X X H L H L L L L H L H L H L H L L H L L X H X H X H X V X H H L L X H X H X H X V L L H H X H X H X H X V X X 1,6 1,6 Entry Precharge Power Down Mode Exit H L X 1,6 1,6 1,6 1,6 L H Active Power Down Mode Entry Exit H L L H X 1,6 1,6 ( H=Logic High Level, L=Logic Low Level, X=Don't Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation ) Note : 1. DM(0~3) states are Don't Care. Refer to below Write Mask Truth Table. 2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from Prechagre command. 3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+tRP). 4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time (tWR) is needed to guarantee that the last data has been completely written. 5. If A8/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged. 6. Both of CS0 & CS1 should be enabled simultaneously. Rev. 0.5 / Aug. 2003 7 HY5DU573222AFM WRITE MASK TRUTH TABLE Function Data Write Data-In Mask CKEn-1 H H CKEn X X /CS0, /CS1, /RAS, /CAS, /WE X X DM(0~3) L H ADDR A8/ AP X X BA Note 1,2 1,2 Note : 1. Write Mask command masks burst write data with reference to DQS(0~3) and it is not related with read data. 2. DM0 corresponds to the data on DQ0-Q7; DM1 corresponds to the data on DQ8-Q15; DM2 corresponds to the data on DQ16-Q23; DM3 corresponds to the data on DQ24-Q31. Rev. 0.5 / Aug. 2003 8 HY5DU573222AFM OPERATION COMMAND TRUTH TABLE - I Current State /CS0 /CS1 H L L L IDLE L L L L L H L L L ROW ACTIVE L L L L L H L L L READ L L L L L H L WRITE L L L /RAS X H H H H L L L L X H H H H L L L L X H H H H L L L L X H H H H /CAS X H H L L H H L L X H H L L H H L L X H H L L H H L L X H H L L /WE X H L H L H L H L X H L H L H L H L X H L H L H L H L X H L H L Address X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP Command DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS *12 DSEL NOP BST READ/READAP*13 WRITE/WRITEAP*13 ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP*13 WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP*13 WRITE/WRITEAP*13 Action NOP or power down3 NOP or power down3 ILLEGAL4 ILLEGAL4 ILLEGAL4 Row Activation NOP Auto Refresh or Self Refresh5 Mode Register Set NOP NOP ILLEGAL4 Begin read : optional AP6 Begin write : optional AP6 ILLEGAL4 Precharge7 ILLEGAL11 ILLEGAL11 Continue burst to end Continue burst to end Terminate burst Term burst, new read:optional AP8 ILLEGAL ILLEGAL4 Term burst, precharge ILLEGAL11 ILLEGAL11 Continue burst to end Continue burst to end ILLEGAL4 Term burst, new read:optional AP8 Term burst, new write:optional AP Rev. 0.5 / Aug. 2003 9 HY5DU573222AFM OPERATION COMMAND TRUTH TABLE - II Current State /CS0 /CS1 L WRITE L L L H L L READ WITH AUTOPRECHARGE L L L L L L H L L WRITE AUTOPRECHARGE L L L L L L H L L L PRECHARGE L L L L L /RAS L L L L X H H H H L L L L X H H H H L L L L X H H H H L L L L /CAS H H L L X H H L L H H L L X H H L L H H L L X H H L L H H L L /WE H L H L X H L H L H L H L X H L H L H L H L X H L H L H L H L Address BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE Command ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS Action ILLEGAL4 Term burst, precharge ILLEGAL11 ILLEGAL11 Continue burst to end Continue burst to end ILLEGAL ILLEGAL10 ILLEGAL10 ILLEGAL4,10 ILLEGAL4,10 ILLEGAL11 ILLEGAL11 Continue burst to end Continue burst to end ILLEGAL ILLEGAL10 ILLEGAL10 ILLEGAL4,10 ILLEGAL4,10 ILLEGAL11 ILLEGAL11 NOP-Enter IDLE after tRP NOP-Enter IDLE after tRP ILLEGAL4 ILLEGAL4,10 ILLEGAL4,10 ILLEGAL4,10 NOP-Enter IDLE after tRP ILLEGAL11 ILLEGAL11 Rev. 0.5 / Aug. 2003 10 HY5DU573222AFM OPERATION COMMAND TRUTH TABLE - III Current State /CS0 /CS1 H L L L ROW ACTIVATING L L L L L H L L L WRITE RECOVERING L L L L L H L L WRITE RECOVERING WITH AUTOPRECHARGE L L L L L L H L REFRESHING L L /RAS X H H H H L L L L X H H H H L L L L X H H H H L L L L X H H H /CAS X H H L L H H L L X H H L L H H L L X H H L L H H L L X H H L /WE X H L H L H L H L X H L H L H L H L X H L H L H L H L X H L H Address X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP Command DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP Action NOP - Enter ROW ACT after tRCD NOP - Enter ROW ACT after tRCD ILLEGAL4 ILLEGAL4,10 ILLEGAL4,10 ILLEGAL4,9,10 ILLEGAL4,10 ILLEGAL11 ILLEGAL11 NOP - Enter ROW ACT after tWR NOP - Enter ROW ACT after tWR ILLEGAL4 ILLEGAL ILLEGAL ILLEGAL4,10 ILLEGAL4,11 ILLEGAL11 ILLEGAL11 NOP - Enter precharge after tDPL NOP - Enter precharge after tDPL ILLEGAL4 ILLEGAL4,8,10 ILLEGAL4,10 ILLEGAL4,10 ILLEGAL4,11 ILLEGAL11 ILLEGAL11 NOP - Enter IDLE after tRC NOP - Enter IDLE after tRC ILLEGAL11 ILLEGAL11 Rev. 0.5 / Aug. 2003 11 HY5DU573222AFM OPERATION COMMAND TRUTH TABLE - IV Current State /CS0 /CS1 L L WRITE L L L H L L L MODE REGISTER ACCESSING L L L L L /RAS H L L L L X H H H H L L L L /CAS L H H L L X H H L L H H L L /WE L H L H L X H L H L H L H L Address BA, CA, AP BA, RA BA, AP X OPCODE X X X BA, CA, AP BA, CA, AP BA, RA BA, AP X OPCODE Command WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS DSEL NOP BST READ/READAP WRITE/WRITEAP ACT PRE/PALL AREF/SREF MRS Action ILLEGAL11 ILLEGAL11 ILLEGAL11 ILLEGAL11 ILLEGAL11 NOP - Enter IDLE after tMRD NOP - Enter IDLE after tMRD ILLEGAL11 ILLEGAL11 ILLEGAL11 ILLEGAL11 ILLEGAL11 ILLEGAL11 ILLEGAL11 Note : 1. H - Logic High Level, L - Logic Low Level, X - Don't Care, V - Valid Data Input, BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation. 2. All entries assume that CKE was active(high level) during the preceding clock cycle. 3. If both banks are idle and CKE is inactive(low level), then in power down mode. 4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of that bank. 5. If both banks are idle and CKE is inactive(low level), then self refresh mode. 6. Illegal if tRCD is not met. 7. Illegal if tRAS is not met. 8. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 9. Illegal if tRRD is not met. 10. Illegal for single bank, but legal for other banks in multi-bank devices. 11. Illegal for all banks. 12. Both of CS0 & CS1 should be enabled in pairs. 13. One of CS0 & CS1 should be enabled, individually. Rev. 0.5 / Aug. 2003 12 HY5DU573222AFM CKE FUNCTION TRUTH TABLE Current State CKEn1 H L L SELF REFRESH1 L L L L H L POWER DOWN2 L L L L L H H H ALL BANKS IDLE4 H H H H H L ANY STATE OTHER THAN ABOVE H H L L CKEn X H H H H H L X H H H H H L H L L L L L L L L H L H L /CS0 /CS1 X H L L L L X X H L L L L X X L H L L L L L X X X X X /RAS X X H H H L X X X H H H L X X L X H H H L L X X X X X /CAS X X H H L X X X X H H L X X X L X H H L H L X X X X X /WE X X H L X X X X X H L X X X X H X H L X X L X X X X X /ADD X X X X X X X X X X X X X X X X X X X X X X X X X X X Action INVALID Exit self refresh, enter idle after tSREX* Exit self refresh, enter idle after tSREX* ILLEGAL ILLEGAL ILLEGAL NOP, continue self refresh INVALID Exit power down, enter idle* Exit power down, enter idle* ILLEGAL ILLEGAL ILLEGAL NOP, continue power down mode See operation command truth table Enter self refresh* Exit power down* Exit power down* ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP See operation command truth table ILLEGAL5 INVALID INVALID Note : When CKE=L, all DQ and DQS(0~3) must be in Hi-Z state. 1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command. 2. All command can be stored after 2 clocks from low to high transition of CKE. 3. Illegal if CK is suspended or stopped during the power down mode. 4. Self refresh can be entered only from the all banks idle state. 5. Disabling CK may cause malfunction of any bank which is in active state. 6. * Both CSO & CSI should be emabled, simultaneouly. Rev. 0.5 / Aug. 2003 13 HY5DU573222AFM SIMPLIFIED STATE DIAGRAM MODE REGISTER SET MRS IDLE SREF SREX SELF REFRESH *1 PDEN PDEX AREF ACT POWER DOWN PDEX AUTO REFRESH POWER DOWN PDEN BST BANK ACTIVE READ WRITE READAP WRITE PRE(PALL) PRE(PALL) PRE(PALL) WRITE *2 WITH AUTOPRECHARGE READ READAP WITH AUTOPRECHARGE WRITEAP *2 READ READ *2 WRITEAP *2 WRITE PRE(PALL) PRE(PALL) PRECHARGE POWER-UP Command Input Automatic Sequence POWER APPLIED Note: *1.Both of CS0 and CS1 should be enabled in pairs. *2.Both of CS0 and CS1 should be enabled, individually. Rev. 0.5 / Aug. 2003 14 HY5DU573222AFM POWER-UP SEQUENCE AND DEVICE INITIALIZATION DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200us delay prior to applying an executable command. Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Register set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state. Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation. 1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVCMOS low state. (All the other input pins may be undefined. No power sequencing is specified during power up or power down given the following cirteria : * VDD and VDDQ are driven from a single power converter output. * VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation). * VREF tracks VDDQ/2. * A minimum resistance of 42 ohms (22 ohm series resistor + 22 ohm parallel resistor - 5% tolerance) limits the input current from the VTT supply into any pin. If the above criteria cannot be met by the system design, then the following sequencing and voltage relationship must be adhered to during power up : Voltage description VDDQ VTT VREF 2. 3. 4. 5. 6. Sequencing After or with VDD After or with VDDQ After or with VDDQ Voltage relationship to avoid latch-up < VDD + 0.3V < VDDQ + 0.3V < VDDQ + 0.3V Start clock and maintain stable clock for a minimum of 200usec. After stable power and clock, apply NOP condition and take CKE high. Issue Extended Mode Register Set (EMRS) to enable DLL. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200 cycles(tXSRD) of clock are required for locking DLL) Issue Precharge commands for all banks of the device. Rev. 0.5 / Aug. 2003 15 HY5DU573222AFM 7. 8. Issue 2 or more Auto Refresh commands. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low. Power-Up Sequence VDD VDDQ tVTD VTT VREF /CLK CLK tIS tIH CKE LVCMOS Low Level CMD NOP PRE EMRS MRS NOP PRE AREF MRS ACT RD DM ADDR CODE CODE CODE CODE CODE A10 CODE CODE CODE CODE CODE BA0, BA1 CODE CODE CODE CODE CODE DQS DQ'S T=200usec tRP tMRD tMRD tRP tRFC tXSRD* tMRD Power UP VDD and CK stable Precharge All EMRS Set MRS Set Reset DLL (with A8=H) Precharge All 2 or more Auto Refresh MRS Set (with A8=L) Non-Read Command READ * 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command Rev. 0.5 / Aug. 2003 16 HY5DU573222AFM MODE REGISTER SET (MRS) The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length, burst type, test mode, DLL reset. The mode register is program via MRS command. This command is issued by the low signals of /RAS, /CAS, /CS0 ,/CS1, /WE and BA0. This command can be issued only when all banks are in idle state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to write the data in mode register. During the the MRS cycle, any command cannot be issued. Once mode register field is determined, the information will be held until resetted by another MRS command. BA1 0 BA0 0 A11 A10 RFU A9 A8 DR A7 TM A6 A5 A4 A3 BT A2 A1 A0 CAS Latency Burst Length BA0 0 1 MRS Type MRS EMRS A7 0 1 Test Mode Normal Vendor test mode Burst Length A2 A1 A0 Sequential 0 0 0 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Reserved 2 4 8 Reserved Reserved Reserved Reserved Interleave Reserved 2 4 8 Reserved Reserved Reserved Reserved A8 0 1 DLL Reset No Yes A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 CAS Latency Reserved Reserved Reserved 3 4 5 Reserved Reserved A3 0 1 0 1 1 1 1 Burst Type Sequential Interleave Rev. 0.5 / Aug. 2003 17 HY5DU573222AFM BURST DEFINITION Burst Length 2 Starting Address (A2,A1,A0) XX0 XX1 X00 4 X01 X10 X11 000 001 010 8 011 100 101 110 111 Sequential 0, 1 1, 0 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 0 2, 3, 4, 5, 6, 7, 0, 1 3, 4, 5, 6, 7, 0, 1, 2 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 0, 1, 2, 3, 4 6, 7, 0, 1, 2, 3, 4, 5 0, 1, 2, 3, 4, 5, 6, 7 Interleave 0, 1 1, 0 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0 BURST LENGTH & TYPE Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst length determines the maximum number of column locations that can be accessed for a given Read or Write command. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst length is set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both Read and Write bursts. Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Burst Definitionon Table Rev. 0.5 / Aug. 2003 18 HY5DU573222AFM CAS LATENCY The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the availability of the first burst of output data. The latency can be programmed 3, 4 or 5 clocks. If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident with clock edge n + m. Reserved states should not be used as unknown operation or incompatibility with future versions may result. DLL RESET The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally applied clock before an any command can be issued. OUTPUT DRIVER IMPEDANCE CONTROL This device supports both Half strength driver and Matched impedance driver, intended for lighter load and/or point-topoint environments. Half strength driver is to define about 50% of Full drive strength which is specified to be SSTL_2, Class II, and Matched impedance driver, about 30% of Full drive strength. Rev. 0.5 / Aug. 2003 19 HY5DU573222AFM EXTENDED MODE REGISTER SET (EMRS) The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional functions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits shown below. The Extended Mode Register is programmed via the Mode Register Set command ( BA0=1 and BA1=0) and will retain the stored information until it is programmed again or the device loses power. The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements will result in unspecified operation. BA1 0 BA0 1 A11 A10 A9 RFU* A8 A7 A6 DS A5 A4 RFU* A3 A2 DS A1 DS A0 DLL BA0 0 1 MRS Type MRS EMRS A0 0 1 DLL enable Enable Diable A2 0 0 0 0 1 1 1 1 A6 0 0 1 1 0 0 1 1 A1 0 1 0 1 0 1 0 1 Output Driver Impedance Control RFU* Half (60%) RFU* Weak (40%) RFU* Semi Half (50%) RFU* Semi Weak (30%) * All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage. Rev. 0.5 / Aug. 2003 20 HY5DU573222AFM ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Voltage on VDDQ relative to VSS Output Short Circuit Current Power Dissipation Soldering Temperature Time Symbol TA TSTG VIN, VOUT VDD VDDQ IOS PD TSOLDER Rating 0 ~ 70 -55 ~ 125 -0.5 ~ 3.6 -0.5 ~ 3.6 -0.5 ~ 3.6 50 2 260 10 Unit oC o C V V V mA W oC sec Note : Operation at above absolute maximum rating can adversely affect device reliability DC OPERATING CONDITIONS Parameter Power Supply Voltage (TA=0 to 70oC, Voltage referenced to VSS = 0V) Symbol VDD Min 2.2 2.375 2.55 2.2 Typ 2.5 2.5 2.8 2.5 2.5 2.8 VREF 0.5*VDDQ Max 2.625 2.625 2.95 2.625 2.625 2.95 VDDQ + 0.3 VREF - 0.15 VREF + 0.04 0.51*VDDQ Unit V V V V V V V V V V Note 1, 4 1, 5 1, 6 1, 4 1, 5 1, 6 Power Supply Voltage Input High Voltage Input Low Voltage Termination Voltage Reference Voltage VDDQ VIH VIL VTT VREF 2.375 2.55 VREF + 0.15 -0.3 VREF - 0.04 0.49*VDDQ 2 3 Note : 1. VDDQ must not exceed the level of VDD. 2. VIL (min) is acceptable -1.5V AC pulse width with 5ns of duration. 3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed 2% of the DC value. 4. Supports 300MHz 5. Supports 275/250MHz 6. Supports 400/350MHz DC CHARACTERISTICS I Parameter Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage (TA=0 to 70oC, Voltage referenced to VSS = 0V) Symbol ILI ILO VOH VOL Min -2 -5 VTT + 0.76 - Max 2 5 VTT - 0.76 Unit uA uA V V Note 1 2 IOH = -15.2mA IOL = +15.2mA Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.7V Rev. 0.5 / Aug. 2003 21 HY5DU573222AFM DC CHARACTERISTICS II Parameter Sym bol (TA=0 to 70oC, Voltage referenced to VSS = 0V) Speed 25 28 33 36 4 Test Condition Unit Note Operating Current One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and IDD0 control inputs changing once per clock cycle one chip active, the other chip precarge standby Burst length=4, One bank active tRC tRC(min), IOL=0mA IDD1 one chip active, the other chip precarge standby 260 240 220 210 200 mA 1 Operating Current 280 260 240 230 220 mA 1 Precharge Standby CKE VIL(max), tCK=min Current in Power Down IDD2P both chips precharge standby Mode Precharge Standby Current in Non Power Down Mode Active Standby Current in Power Down Mode Active Standby Current in Non Power Down Mode IDD2N CKE VIH(min), /CS VIH(min), tCK = min, Input signals are changed one time during 2clks both chips precharge standby 70 60 50 50 50 mA 170 150 120 120 120 mA CKE VIL(max), tCK=min IDD3P one chip active standby, the other chip precharge standby CKE VIH(min), /CS VIH(min), tCK=min, Input signals IDD3N are changed one time during 2clks one chip active standby, the other chip precharge standby tCK tCK (min),IoL=0mA IDD4 All banks both chips active tRC tRFC(min), IDD5 All banks active both chips refresh IDD6 IDD7 CKE 0.2V both chips refresh Four bank interleaving with BL=4, both chips and 4 bank interleaving 100 90 70 70 70 mA 270 250 200 200 200 mA Burst Mode Operating Current 820 740 620 570 570 mA 1 Auto Refresh Current 700 700 600 600 600 mA 1,2 Self Refresh Current Operating Current Four Bank Operation 6 1100 6 950 6 820 6 720 6 720 mA mA Note : 1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open. 2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS. Rev. 0.5 / Aug. 2003 22 HY5DU573222AFM AC OPERATING CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals Input Differential Voltage, CK and /CK inputs Input Crossing Point Voltage, CK and /CK inputs Symbol VIH(AC) VIL(AC) VID(AC) VIX(AC) 0.7 0.5*VDDQ-0.2 Min VREF + 0.35 VREF - 0.35 VDDQ + 0.6 0.5*VDDQ+0.2 Max Unit V V V V 1 2 Note Note : 1. VID is the magnitude of the difference between the input level on CK and the input on /CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Reference Voltage Termination Voltage AC Input High Level Voltage (VIH, min) AC Input Low Level Voltage (VIL, max) Input Timing Measurement Reference Level Voltage Output Timing Measurement Reference Level Voltage Input Signal maximum peak swing Input minimum Signal Slew Rate Termination Resistor (RT) Series Resistor (RS) Output Load Capacitance for Access Time Measurement (CL) Value VDDQ x 0.5 VDDQ x 0.5 VREF + 0.35 VREF - 0.35 VREF VTT 1.5 1 50 25 30 Unit V V V V V V V V/ns pF Rev. 0.5 / Aug. 2003 23 HY5DU573222AFM AC CHARACTERISTICS - I (AC operating conditions unless otherwise noted) Parameter Row Cycle Time Auto Refresh Row Cycle Time Row Active Time Row Address to Column Address Delay for Read Row Address to Column Address Delay for Write Row Active to Row Active Delay Column Address to Column Address Delay Row Precharge Time Write Recovery Time Last Data-In to Read Command Auto Precharge Write Recovery + Precharge Time System Clock Cycle Time Clock High Level Width Clock Low Level Width Data-Out edge to Clock edge Skew DQS-Out edge to Clock edge Skew DQS-Out edge to Data-Out edge Skew Data-Out hold time from DQS Clock Half Period Data Hold Skew Factor Input Setup Time Input Hold Time Write DQS High Level Width Write DQS Low Level Width Clock to First Rising edge of DQS-In Data-In Setup Time to DQS-In (DQ & DM) Data-In Hold Time to DQS-In (DQ & DM) CL=5 CL=4 Symbol tRC tRFC tRAS tRCDRD tRCDWR tRRD tCCD tRP tWR tDRL tDAL tCK tCH tCL tAC tDQSCK tDQSQ tQH tHP tQHS tIS tIH tDQSH tDQSL tDQSS tDS tDH 25 Min 18 21 12 6 3 4 1 6 3 2 9 2.5 0.45 0.45 -0.6 -0.6 tHPmin -tQHS tCH/L min 0.75 0.75 0.4 0.4 0.85 0.35 0.35 Max 100K 6 0.55 0.55 0.6 0.6 0.35 0.35 0.6 0.6 1.15 Min 16 17 10 5 2 4 1 5 3 2 8 2.8 0.45 0.45 -0.6 -0.6 tHPmin -tQHS tCH/L min 0.75 0.75 0.4 0.4 0.85 0.35 0.35 28 Unit Note Max 100K 6 0.55 0.55 0.6 0.6 0.35 0.35 0.6 0.6 1.15 - CK CK CK CK CK CK CK CK CK CK CK ns ns CK CK ns ns ns ns ns ns ns ns CK CK CK ns ns 3 3 1,6 1,5 6 2 2 Rev. 0.5 / Aug. 2003 24 HY5DU573222AFM 25 Min 0.9 0.4 0 0.35 0.4 2 200 2tCK + tIS Max 1.1 0.6 0.6 7.8 Min 0.9 0.4 0 0.35 0.4 2 200 2tCK + tIS 28 Unit Note Parameter Read DQS Preamble Time Read DQS Postamble Time Write DQS Preamble Setup Time Write DQS Preamble Hold Time Write DQS Postamble Time Mode Register Set Delay Exit Self Refresh to Any Execute Command Power Down Exit Time Average Periodic Refresh Interval Note : 1. 2. 3. 4. 5. 6. Symbol tRPRE tRPST tWPRES tWPREH tWPST tMRD tXSC tPDEX tREFI Max 1.1 0.6 0.6 7.8 CK CK ns CK CK CK CK CK us 4 This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS0, /CS1, /RAS, /CAS, /WE. Data latched at both rising and falling edges of Data Strobes(DQS0~DQS3) : DQ, DM(0~3). Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. 7. Rev. 0.5 / Aug. 2003 25 HY5DU573222AFM AC CHARACTERISTICS - I (continue) Parameter Row Cycle Time Auto Refresh Row Cycle Time Row Active Time Row Address to Column Address Delay for Read Row Address to Column Address Delay for Write Row Active to Row Active Delay Column Address to Column Address Delay Row Precharge Time Write Recovery Time Last Data-In to Read Command Auto Precharge Write Recovery + Precharge Time System Clock Cycle Time Clock High Level Width Clock Low Level Width Data-Out edge to Clock edge Skew DQS-Out edge to Clock edge Skew DQS-Out edge to Data-Out edge Skew Data-Out hold time from DQS Clock Half Period Data Hold Skew Factor Input Setup Time Input Hold Time Write DQS High Level Width Write DQS Low Level Width Clock to First Rising edge of DQS-In Data-In Setup Time to DQS-In (DQ & DM) Data-In Hold Time to DQS-In (DQ & DM) CL=4 CL=3 Symbol tRC tRFC tRAS tRCDRD tRCDWR tRRD tCCD tRP tWR tDRL tDAL tCK tCH tCL tAC tDQSCK tDQSQ tQH tHP tQHS tIS tIH tDQSH tDQSL tDQSS tDS tDH 33 Min 14 17 9 5 2 3 1 5 3 2 8 3.3 4.5 0.45 0.45 -0.6 -0.6 tHPmin -tQHS tCH/L min 0.75 0.75 0.4 0.4 0.85 0.35 0.35 Max 100K 10 10 0.55 0.55 0.6 0.6 0.35 0.35 0.6 0.6 1.15 Min 14 16 9 5 2 3 1 5 3 2 8 3.6 4.5 0.45 0.45 -0.6 -0.6 tHPmin -tQHS tCH/L min 0.75 0.75 0.4 0.4 0.85 0.4 0.4 36 Max 100K 10 10 0.55 0.55 0.6 0.6 0.4 0.4 0.6 0.6 1.15 Min 13 15 8 5 2 3 1 5 3 2 8 4 4.5 0.45 0.45 -0.6 -0.6 tHPmin -tQHS tCH/L min 0.75 0.75 0.4 0.4 0.85 0.4 0.4 4 Unit Note Max 100K 10 10 0.55 0.55 0.6 0.6 0.4 0.4 0.6 0.6 1.15 - CK CK CK CK CK CK CK CK CK CK CK ns ns CK CK ns ns ns ns ns ns ns ns CK CK CK ns ns 3 3 1,6 1,5 6 2 2 Rev. 0.5 / Aug. 2003 26 HY5DU573222AFM 33 Min 0.9 0.4 0 0.35 0.4 2 200 2tCK + tIS Max 1.1 0.6 0.6 7.8 Min 0.9 0.4 0 0.35 0.4 2 200 1tCK + tIS 36 Max 1.1 0.6 0.6 7.8 Min 0.9 0.4 0 0.35 0.4 2 200 1tCK + tIS 4 Unit Note Parameter Read DQS Preamble Time Read DQS Postamble Time Write DQS Preamble Setup Time Write DQS Preamble Hold Time Write DQS Postamble Time Mode Register Set Delay Exit Self Refresh to Any Execute Command Power Down Exit Time Average Periodic Refresh Interval Note : 1. 2. 3. 4. 5. 6. Symbol tRPRE tRPST tWPRES tWPREH tWPST tMRD tXSC tPDEX tREFI Max 1.1 0.6 0.6 7.8 CK CK ns CK CK CK CK CK us 4 This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS0, /CS1, /RAS, /CAS, /WE. Data latched at both rising and falling edges of Data Strobes(DQS0~DQS3) : DQ, DM(0~3). Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. 7. Rev. 0.5 / Aug. 2003 27 HY5DU573222AFM AC CHARACTERISTICS - II Frequency 400MHz (2.5ns) 350MHz (2.8ns) 300MHz (3.3ns) 275MHz (3.6ns) 250MHz (4.0ns) CL 5 4 4 4 4 tRC 18 16 14 14 13 tRFC 21 17 17 16 15 tRAS 12 10 9 9 8 tRCDRD 6 5 5 5 5 tRCDWR 3 2 2 2 2 tRP 6 5 5 5 5 tDAL 9 8 8 8 8 Unit tCK tCK tCK tCK tCK Rev. 0.5 / Aug. 2003 28 HY5DU573222AFM CAPACITANCE (TA=25oC, f=1MHz ) Parameter Input Clock Capacitance Input Capacitance Input / Output Capacitance CK, /CK All other input-only pins DQ, DQS, DM Pin Symbol CCK CIN CIO Min 1.5 1.5 5.5 Max 5.5 5.5 9.5 Unit pF pF pF Note : 1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V 2. Pins not under test are tied to GND. 3. These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT VTT RT=50 Output Zo=50 VREF CL=30pF Rev. 0.5 / Aug. 2003 29 HY5DU573222AFM PACKAGE INFORMATION 12mm x 12mm, 144ball Fine-pitch Ball Grid Array 12mm 0.1mm 1.4 mm Max 0.96mm 0.05mm 12mm 0.1mm Detailed "A" 8.8mm 0.35mm 0.05mm 0.8mm Detailed "A" 8.8mm 0.12mm 0.5mm Diameter 0.55Max 0.45Min [ Ball Location ] Ball existing Optional (Thermal ball, NC, No ball ) Depopulated ball (MO 205-D, AE in JEDEC) Rev. 0.5 / Aug. 2003 30 |
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